HIGH SENSITIVITY RESIST SYSTEM WITH SEPARABLY DEVELOPABLE LAYERS
HIGH SENSITIVITY RESIST SYSTEM FOR LIFT-OFF METALLIZATION High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutually exclusive of one another. T...
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| creator | HATZAKIS, MICHAEL |
| description | HIGH SENSITIVITY RESIST SYSTEM FOR LIFT-OFF METALLIZATION High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutually exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5x10-6 coulombs/cm2. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CA1071455A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CA1071455A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CA1071455A3</originalsourceid><addsrcrecordid>eNrjZHDw8HT3UAh29Qv2DPEM8wyJVAhyDfYMDlEIjgwOcfVVCPcMAUkHOAY5OvlEKri4hrn6-AcA2a4KPo6RrkHBPAysaYk5xam8UJqbQd7NNcTZQze1ID8-tbggMTk1L7Uk3tnR0MDc0MTU1NGYsAoAQLsqMw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH SENSITIVITY RESIST SYSTEM WITH SEPARABLY DEVELOPABLE LAYERS</title><source>esp@cenet</source><creator>HATZAKIS, MICHAEL</creator><creatorcontrib>HATZAKIS, MICHAEL</creatorcontrib><description>HIGH SENSITIVITY RESIST SYSTEM FOR LIFT-OFF METALLIZATION High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutually exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5x10-6 coulombs/cm2.</description><language>eng ; fre</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>1980</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800212&DB=EPODOC&CC=CA&NR=1071455A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800212&DB=EPODOC&CC=CA&NR=1071455A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HATZAKIS, MICHAEL</creatorcontrib><title>HIGH SENSITIVITY RESIST SYSTEM WITH SEPARABLY DEVELOPABLE LAYERS</title><description>HIGH SENSITIVITY RESIST SYSTEM FOR LIFT-OFF METALLIZATION High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutually exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5x10-6 coulombs/cm2.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1980</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDw8HT3UAh29Qv2DPEM8wyJVAhyDfYMDlEIjgwOcfVVCPcMAUkHOAY5OvlEKri4hrn6-AcA2a4KPo6RrkHBPAysaYk5xam8UJqbQd7NNcTZQze1ID8-tbggMTk1L7Uk3tnR0MDc0MTU1NGYsAoAQLsqMw</recordid><startdate>19800212</startdate><enddate>19800212</enddate><creator>HATZAKIS, MICHAEL</creator><scope>EVB</scope></search><sort><creationdate>19800212</creationdate><title>HIGH SENSITIVITY RESIST SYSTEM WITH SEPARABLY DEVELOPABLE LAYERS</title><author>HATZAKIS, MICHAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA1071455A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>1980</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HATZAKIS, MICHAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HATZAKIS, MICHAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH SENSITIVITY RESIST SYSTEM WITH SEPARABLY DEVELOPABLE LAYERS</title><date>1980-02-12</date><risdate>1980</risdate><abstract>HIGH SENSITIVITY RESIST SYSTEM FOR LIFT-OFF METALLIZATION High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutually exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5x10-6 coulombs/cm2.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
| title | HIGH SENSITIVITY RESIST SYSTEM WITH SEPARABLY DEVELOPABLE LAYERS |
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