METHOD OF DEPOSITING THIN FILM UTILIZING A LIFT-OFF MASK
A method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing a non-photosensitive organic polymeric material on a substrate, and forming on said polymeric layer a masking layer of an inorganic material, pre...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing a non-photosensitive organic polymeric material on a substrate, and forming on said polymeric layer a masking layer of an inorganic material, preferably metal, having openings in a selected pattern. Then, forming, by reactive sputter etching, utilizing the metallic mask as a barrier, openings through the polymeric layer extending to the substrate, the openings in the polymeric layer being aligned with and laterally wider than the corresponding openings in the metallic masking layer. The thin film to be deposited is then applied over the structure; it is, thereby, deposited on the substrate in said openings. Then, the remaining polymeric layer is removed, lifting off the masking layer and the thin film above the polymeric layer to leave thin film deposited in a selected pattern in the openings. |
---|