ELECTRON BEAM SENSITIVE POLYMER T-BUTYL METHACRYLATE RESIST

Patterns, such as etch resistant resists, masks, are formed by degradation of a t-butyl methacrylate polymer coating, or film, under an electron beam in a predetermined pattern, followed by removal with a solvent, of the electron degraded product in the exposed areas.

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Bibliographische Detailangaben
Hauptverfasser: LEVINE, HAROLD A, GIPSTEIN, EDWARD, HEWETT, WILLIAM A
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Patterns, such as etch resistant resists, masks, are formed by degradation of a t-butyl methacrylate polymer coating, or film, under an electron beam in a predetermined pattern, followed by removal with a solvent, of the electron degraded product in the exposed areas.