produção de silício através da reação de óxido de silício e carbureto de silício, opcionalmente na presença de uma segunda fonte de carbono
The invention relates to a method for producing silicon by reacting silicon oxide at an elevated temperature, silicon carbide and, optionally, a second carbon source being added to the reaction mixture. The invention further relates to a composition that can be used in the disclosed method. The esse...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | por |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a method for producing silicon by reacting silicon oxide at an elevated temperature, silicon carbide and, optionally, a second carbon source being added to the reaction mixture. The invention further relates to a composition that can be used in the disclosed method. The essential part of the invention is the use of silicon carbide as a reaction initiator and/or reaction accelerator during the production of silicon or, alternatively, in nearly equimolar amounts for the production of silicon. |
---|