CABECOTE MICROMECANICO SENSOR DE FORCA ATOMICA

The micromechanical sensor head is designed to measure forces down to 10 N. It comprises a common base (38) from which a cantilever beam (40) and a beam member (44) extend in parallel. The cantilever beam (40) carries a sharply pointed tip (37) of a hard material, dielectric or not, for interaction...

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Bibliographische Detailangaben
Hauptverfasser:	WOLFGANG D POHL, OLAF WOLTER, JAMES K GIMZEWSKI, URS THEODOR DUERIG, JOHANN GRESCHNER
Format:	Patent
Sprache:	por
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS TARIFF METERING APPARATUS TESTING
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Beschreibung
Zusammenfassung:	The micromechanical sensor head is designed to measure forces down to 10 N. It comprises a common base (38) from which a cantilever beam (40) and a beam member (44) extend in parallel. The cantilever beam (40) carries a sharply pointed tip (37) of a hard material, dielectric or not, for interaction with the surface of a sample (36) to be investigated. Bulges (45, 46) forming a tunneling junction protrude from facing surfaces of said beams (40, 44), the gap between said bulges (45, 46) being adjustable by meams of electrostatic forces generated by a potential ( V d) applied to a pair of electrodes (41, 43) respectively coated onto parallel surfaces of said beams (40, 44). The sensor head consists of one single piece of semiconductor material, such as silicon or gallium arsenide (or any other compounds thereof) which is fabricated to the dimensions required for the application by meams of conventional semiconductor chip manufacturing techniques.