PROCESSO DE PURIFICACAO DE SILICIO

A process is disclosed for purifying silicon wherein silicon in the molten state is reacted with barium carbonate and/or oxide and/or hydroxide and then, after cooling and crushing, leached with one or more dilute inorganic acids. Preferably an oxidizing gas such as oxygen or water vapor is blown in...

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Bibliographische Detailangaben
Hauptverfasser: PELOSINI L, PARISI A, PIZZINI S
Format: Patent
Sprache:por
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Beschreibung
Zusammenfassung:A process is disclosed for purifying silicon wherein silicon in the molten state is reacted with barium carbonate and/or oxide and/or hydroxide and then, after cooling and crushing, leached with one or more dilute inorganic acids. Preferably an oxidizing gas such as oxygen or water vapor is blown into the molten mass during the reaction, which is conducted at a temperature in the range of from 1550 DEG to 2000 DEG C. The inorganic acid may be for example hydrochloric acid, hydrofluoric acid, nitric acid, sulphuric acid, or mixtures thereof.