aparelho de célula de memória eletrônica integrada, método de operação de memória de mudança de fase, método de fabricação de uma célula de memória de mudança de fase em um substrato, estrutura de projeto para projetar, fabricar ou testar circuitos integrados e programa de computador para executar o dito método de operação

A method for operating a phase change memory that includes initializing a memory cell that includes: a first conductive electrode having a length greater than its width and an axis aligned with the length; a second conductive electrode having an edge oriented at an angle to the axis of the first conductive electrode; an insulator providing a separation distance between an end of the first conductive electrode and the edge of the second conductive electrode; and a phase change material covering a substantial portion of the first conductive electrode and at least a portion of the second conductive electrode. The initializing the memory cell includes creating a first amorphous material region in the phase change material. An active crystalline material region is created inside the first amorphous material region. Information is stored in the memory cell by creating a second amorphous material region inside the active crystalline material region.