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A semiconductor switching device comprising a silicon controlled rectifier (SCR) and a diode rectifier integrally connected in parallel with the SCR in a single semiconductor body. The device is of the NPNP or PNPN type, having gate, cathode, and anode electrodes. A portion of each intermediate N an...

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Bibliographische Detailangaben
Hauptverfasser:	L.S. GREENBERG, J.M.S. NEILSON, A.W. THOMAS
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor switching device comprising a silicon controlled rectifier (SCR) and a diode rectifier integrally connected in parallel with the SCR in a single semiconductor body. The device is of the NPNP or PNPN type, having gate, cathode, and anode electrodes. A portion of each intermediate N and P region makes ohmic contact to the respective anode or cathode electrode of the SCR. In addition, each intermediate region includes a highly conductive edge portion. These portions are spaced from the adjacent external regions by relatively low conductive portions, and limit the conduction of the diode rectifier to the periphery of the device. A profile of gold recombination centers further electrically isolates the central SCR portion from the peripheral diode portion.