Silicon-on-insulator (soi) trench photodiode and method of forming same

Silicon-on-insulator (soi) trench photodiode and method of forming same

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby al...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DAN MOY, MARK RITTER, JEFFREY JOHN WELSER, DENNIS ROGERS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.