HIGH-VOLTAGE SOLID STATE SWITCH

It consists of a polycrystalline semiconductor element (12) holding a monocrystalline semiconductor body (16), whose mass is conductivity of type n and separated from the support element (12) by a dielectric layer (14); from a first lozalized anodic region (18) with conductivity of type p; from a se...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: T.J. RILEY, P.W. SHACKLE, A.R. HARTMAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:It consists of a polycrystalline semiconductor element (12) holding a monocrystalline semiconductor body (16), whose mass is conductivity of type n and separated from the support element (12) by a dielectric layer (14); from a first lozalized anodic region (18) with conductivity of type p; from a second region of localized door (20) with conductivity of type n; from a third localized cathode region (24) with conductivity of type n; from a region (22) with conductivity of the type of a region (22) with conductivity of type p, that surrounding the third region (24) intimately and acting as a protective area. (Machine-translation by Google Translate, not legally binding)