SEMICONDUCTOR CATHODE

The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerati...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: G. G. P. VAN GORKOM, A. M. E. HOEBERECHTS
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.