Giant magnetoresistive sensor having self-consistent demagnetization fields

The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned...

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Bibliographische Detailangaben
Hauptverfasser:	JUAN J. FERNANDEZ-DE-CASTRO, LUJUN CHEN, JAMES H. GIUSTI
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M1) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M2) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.