PHOTOSENSITIVE TARGET

A CCD solid state image sensor device. During the integration period the surface in the image pick-up section is switched alternately into inversion and into accumulation. Any excess of charge carriers which results from possible overexposure can thus be drained by means of recombination via sufaces...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MARNIX GUILLAUME COLLET, JOHANNES GERRIT VAN SANTEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A CCD solid state image sensor device. During the integration period the surface in the image pick-up section is switched alternately into inversion and into accumulation. Any excess of charge carriers which results from possible overexposure can thus be drained by means of recombination via sufaces states.