COMBINED ION IMPLANTATION AND DIFFUSION

COMBINED ION IMPLANTATION AND DIFFUSION

A region in an integrated circuit substrate is formed by first ion implanting impurities of a selected conductivity-determining type into a semiconductor substrate through at least one aperture in a masking electrically insulative layer, and then diffusing a conductivity-determining impurity of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: J. REGH, C.A. BARILE, J.L. FORNERIS, R.M. BRILL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A region in an integrated circuit substrate is formed by first ion implanting impurities of a selected conductivity-determining type into a semiconductor substrate through at least one aperture in a masking electrically insulative layer, and then diffusing a conductivity-determining impurity of the same type through the same aperture into said substrate.