Method and device for treating thin layers of amorphous silicon

The invention concerns the field of treatments, by energy intake, of thin deposited layers of hydrogenated amorphous silicon to modify a selected physico-chemical property of the layers. The invention is characterised in that it consists in illuminating the layers with a light source emitting a radi...

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Bibliographische Detailangaben
Hauptverfasser:	MARC STEHLE, DORIAN ZAHORSKI
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The invention concerns the field of treatments, by energy intake, of thin deposited layers of hydrogenated amorphous silicon to modify a selected physico-chemical property of the layers. The invention is characterised in that it consists in illuminating the layers with a light source emitting a radiation of wavelength included in an optical absorption band of the amorphous silicon, and capable of delivering at least a treating pulse, lasting between 50 ns and 500 ns, thereby enabling the raise the electronic mobility ( mu ) of the thin layer by a factor ranging between 1.5 and 10.