A titanium nitride diffusion barrier for use in non-silicon technologies and metallization method

As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.