Self-aligned magnetic clad write line and method thereof
A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure ( 274 ) extends within a trench ( 258 ) and includes a conductive material ( 264 ), magnetic cladding si...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure ( 274 ) extends within a trench ( 258 ) and includes a conductive material ( 264 ), magnetic cladding sidewalls ( 262 ) and a magnetic cladding cap ( 252 ). The magnetic cladding sidewalls ( 262 ) at least partially surround the conductive material ( 264 ) and the magnetic cladding cap ( 252 ) is substantially recessed within the trench with respect to the top of the trench. |
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