Apparatus for growing single crystals

The invention provides apparatus for single crystal growth, including a chamber housing a heatable crucible having a bottom wall and side walls and being rotatable about an axis, means for feeding raw material into the crucible, and further including a seed crystal mounted on a movable rod along the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MARK TSIRLIN, HERMAN BRANOVER, YURI GELFGAT, SHAUL LESIN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention provides apparatus for single crystal growth, including a chamber housing a heatable crucible having a bottom wall and side walls and being rotatable about an axis, means for feeding raw material into the crucible, and further including a seed crystal mounted on a movable rod along the axis, the apparatus including an annular heater disposed in the crucible about the axis and above the bottom wall so as to leave a gap between them for melted crystal material flow from a first heating zone defined by the inner surface of the side walls, the outer surface of the annular heater and the peripheral area of the bottom wall, and a second heating zone defined by the inner surface of the annular heater and the central area of the bottom wall.