Method for manufacturing nanowires

A method for manufacturing a nanowire, particularly of semiconductor material such as InAs or InSb, includes providing a sacrificial substrate, providing a patterned mask layer thereon, providing a nanowire through an opening in the patterned mask layer, and removing the sacrificial substrate. The m...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GARDNER, Geoffrey C, KALLAHER, Raymond L, GRONIN, Sergei V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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