Method for manufacturing nanowires

A method for manufacturing a nanowire, particularly of semiconductor material such as InAs or InSb, includes providing a sacrificial substrate, providing a patterned mask layer thereon, providing a nanowire through an opening in the patterned mask layer, and removing the sacrificial substrate. The material of the sacrificial substrate can be chosen to be lattice matched with the nanowire material without regard to the electrical properties thereof. A superconductor layer can be formed on top of the nanowire before removing the sacrificial substrate, and an additional superconductor layer can be formed on a bottom side of the nanowire after removing the sacrificial substrate.