ANS/D SPACER ENGINEERED DG-AMBIPOLAR FET DEVICEFOR INVESTIGATING THE THERMAL DEPENDENCE OF THE DC, ANALOG AND RF PERFORMANCE

The present invention generally relates to a S/D spacer engineered DG-Ambipolar FET device. The device comprisesa source and a drain contacts, sandwiching a lightly p-doped nanowire channel are made of NiSi2 ; a gate-channel and a spacer-channel underlap, to improve an on current and on-off current ratio of the device; a gate dielectric constant, above the lightly p-doped nanowire channel, when increased for a fixed equivalent oxide thickness improves its delay performance; a control gate injects a desired carrier type into the lightly p-doped nanowire channel to make the device behave as either a n or p-FET; and a polarity gate blocks an injection of an alternate carriers wherein the drain and the polarity gate are kept fixed at a positive bias for n-type operation and the control gate is swept from negative to positive values which initiates downward movement of band edges. Nrq o w Ti uJ I? ap m d 00 R 0q qn~ ~ O N W!VO t o ~ ,S~1WYSI 0 a- or cr. u I Ni IC¶ it7 o 'F7 (A)zu Nienwo