Semiconductor-superconductor hybrid device

A semiconductor-superconductor hybrid device (100) comprises a semiconductor layer (10) arranged in a sandwich structure between first and second insulating layers (16a, 16b), and a superconductor layer (12) arranged over an edge (14) of the semiconductor layer so as to enable energy level hybridisa...

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Bibliographische Detailangaben
Hauptverfasser:	WINKLER, Georg Wolfgang, LUTCHYN, Roman Mykolayovych, KOUWENHOVEN, Leonardus Petrus, KARIMI, Farhad
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor-superconductor hybrid device (100) comprises a semiconductor layer (10) arranged in a sandwich structure between first and second insulating layers (16a, 16b), and a superconductor layer (12) arranged over an edge (14) of the semiconductor layer so as to enable energy level hybridisation between the semiconductor and the superconductor. Preferably, a gate electrode (20) for electrostatic control of the energy level hybridisation is also included. The device may be useful in a quantum computer. Also provided is a method of manufacturing the device, and a method of inducing topological behaviour in the device.