Optical absorption filter for an integrated device

Apparatus and methods relating to attenuating excitation radiation incident on a sensor (1-122) in an integrated device that is used for sample analysis are described. At least one semiconductor film (1-336) of a selected material and crystal morphology is located between a waveguide (1-115) and a s...

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Bibliographische Detailangaben
Hauptverfasser:	BELLOS, Michael, AHMAD, Faisal R, HOSALI, Sharath, SHEN, Bing, KABIRI, Ali, PRESTON, Kyle, ROTHBERG, Jonathan M, BEACH, James, SCHMID, Gerard, COUMANS, Michael
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS TESTING
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Beschreibung
Zusammenfassung:	Apparatus and methods relating to attenuating excitation radiation incident on a sensor (1-122) in an integrated device that is used for sample analysis are described. At least one semiconductor film (1-336) of a selected material and crystal morphology is located between a waveguide (1-115) and a sensor (1-122) in an integrated device that is formed on a substrate (1-105). Rejection ratios greater than 100 or more can be obtained for excitation and emission wavelengths that are 40 nm apart for a single layer of semiconductor material (1-135).