Protection circuit, oscillation compensation circuit and power supply circuit in solid state pulse modulator

The present disclosure provides a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a...

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Bibliographische Detailangaben
Hauptverfasser: LIU, Yaohong, ZHAO, Ziran, YAN, Xinshui, JIA, Wei, LIU, Jinsheng, LI, Wei
Format: Patent
Sprache:eng
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Zusammenfassung:The present disclosure provides a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to the ground for a gate of the IGBT. 1002 1001 1002 1001 1002 1001 10021001 1002 1004 > I 1003 |_ 1003 I 1003 1003 Fig. 1 +24V Fig.2