Method of forming a superconductor interconnect structure

The disclosed method of forming a superconductor interconnect structure comprises forming a superconducting element (64) in a first dielectric layer (54) that has a top surface aligned with the top surface of the dielectric layer, preferably by a niobium damascene process, forming a second dielectric layer (70) and an opening (76, 86) therein to a top surface of the superconducting element, performing a cleaning process to remove oxides (80, 81) formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier (90) over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing, such as superconducting contact material fill of a dual damascene process.