Thermal processing in silicon

A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination...

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Bibliographische Detailangaben
Hauptverfasser:	Chan, Catherine Emily, Song, Li Hui, Hallam, Brett Jason, Wenham, Stuart Ross, Chong, Chee Mun, Sugianto, Adeline, Edwards, Matthew Bruce, Wenham, Alison Maree, Mai, Ly, Lu, Pei Hsuan, Xu, Guang Qi, Hamer, Phillip George
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.