USE OF AN INERT GRAPHITE LAYER IN A BACK CONTACT OF A PHOTOVOLTAIC CELL

USE OF AN INERT GRAPHITE LAYER IN A BACK CONTACT OF A PHOTOVOLTAIC CELL

USE OF AN INERT GRAPHITE LAYER IN A BACK CONTACT OF A PHOTOVOLTAIC CELL Photovoltaic devices are provided that include a transparent superstrate; a transparent conductive oxide on the transparent superstrate; an n-type window layer on the transparent superstrate; a p-type absorber layer on the n-typ...

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Bibliographische Detailangaben
Hauptverfasser: CLARK, LAURA ANNE, METZGER, WYATT KEITH, LUCAS, TAMMY JANE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:USE OF AN INERT GRAPHITE LAYER IN A BACK CONTACT OF A PHOTOVOLTAIC CELL Photovoltaic devices are provided that include a transparent superstrate; a transparent conductive oxide on the transparent superstrate; an n-type window layer on the transparent superstrate; a p-type absorber layer on the n-type window layer; and an inert conductive paste layer on the back surface of the p-type absorber layer. The p-type absorber layer includes cadmium telluride, and defines a back surface positioned opposite from the n-type window layer that is tellurium enriched. The inert conductive paste layer is substantially free from an acid or acid generator. Methods are also generally provided of forming such a back contact. Fig. 1 r9 20 14 __ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _18 Fig. 2