Anisotropic conductive layer as a back contact in thin film photovoltaic devices

ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES Thin film photovoltaic devices 10 are generally provided. The device 10 can include a transparent conductive oxide layer 14 on a glass substrate 12, an n-type thin film layer 18 on the transparent conductive layer 14, a...

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Hauptverfasser: FELDMAN-PEABODY, SCOTT DANIEL, GOSSMAN, ROBERT DWAYNE, LUCAS, TAMMY JANE
Format: Patent
Sprache:eng
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Zusammenfassung:ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES Thin film photovoltaic devices 10 are generally provided. The device 10 can include a transparent conductive oxide layer 14 on a glass substrate 12, an n-type thin film layer 18 on the transparent conductive layer 14, and a p-type thin film layer 20 on the n-type layer 18. The n-type thin film layer 18 and the p-type thin film layer 20 form a p-n junction. An anisotropic conductive layer 22 is applied on the p-type thin film layer 20, and includes a polymeric binder and a plurality of conductive particles 23. A metal contact layer 24 can then be positioned on the anisotropic conductive layer 22.