Layer for thin film photovoltaics and a solar cell made therefrom

Layer for thin film photovoltaics and a solar cell made therefrom

A photovoltaic device 100 is provided. The photovoltaic device comprises an absorber layer 116 comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANGANG ANDREW XI, FAISAL RAZI AHMAD, BASTIAAN ARIE KOREVAAR, JAMES NEIL JOHNSON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A photovoltaic device 100 is provided. The photovoltaic device comprises an absorber layer 116 comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer 116 is substantially free of silicon. A method 200 of forming the photovoltaic device 100 is provided.