Photoelectric converter device and process for producing the same

A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is p...

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Bibliographische Detailangaben
Hauptverfasser: KOUJI SATAKE, SANEYUKI GOYA, SATOSHI SAKAI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.