Integrated circuit and method for manufacturing

A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FRANK R. BRYANT, DENNIS W. TOM, S. JONATHAN WANG, TERRY E. MCMAHON, GREGORY T. HINDMAN, RICHARD TODD MILLER, SIMON DODD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CORRECTION OF TYPOGRAPHICAL ERRORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME LINING MACHINES PERFORMING OPERATIONS PRINTING SELECTIVE PRINTING MECHANISMS SEMICONDUCTOR DEVICES STAMPS TRANSPORTING TYPEWRITERS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening in the first conductive material that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material, forming a second insulative material over the first conductive material, and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contacts the non-doped region of the substrate.