Plasma CVD apparatus

Disclosed is a plasma CVD apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a substrate (33), comprising a reaction vessel (31) in which the substrate (33) is arranged, means for introducing a reactant gas into the reaction vess...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YOSHIAKI TAKEUCHI, YOSHIKAZU NAWATA, MASAYOSHI MURATA, SATORU SERIZAWA, KAZUHIKO OGAWA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a plasma CVD apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a substrate (33), comprising a reaction vessel (31) in which the substrate (33) is arranged, means for introducing a reactant gas into the reaction vessel (31) and for discharging the waste gas from within the reaction vessel (31), a ladder-shaped electrode (32), i.e., a ladder antenna electrode or a ladder-shaped planar coil electrode, housed in the reaction vessel (31) for generating a glow discharge, and a power source (36) for supplying electric power to the ladder-shaped electrode (32) to permit the ladder-shaped electrode (32) to generate a glow discharge, wherein a power supply line joining the ladder-shaped electrode (32) and the power source (36) is formed of a coaxial cable, and the ladder-shaped electrode (32) is not connected to the ground via a ground wire.