ÄTZVERFAHREN FÜR NICKELSILICID UND KOBALTSILICID UND VERFAHREN ZUR HERSTELLUNG VON LEITERBAHNEN
The invention includes methods of etching nickel silicide and cobalt silicide. In one implementation, at least one of nickel silicide or cobalt silicide is exposed to a fluid comprising H 2 SO 4 , H 2 O 2 , H 2 O,and HF at a temperature of at least 50°C and at a pressure from, 350 Torr to 1100 Torr...
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| Format: | Patent |
| Sprache: | ger |
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| Zusammenfassung: | The invention includes methods of etching nickel silicide and cobalt silicide. In one implementation, at least one of nickel silicide or cobalt silicide is exposed to a fluid comprising H 2 SO 4 , H 2 O 2 , H 2 O,and HF at a temperature of at least 50°C and at a pressure from, 350 Torr to 1100 Torr effective to etch the at least one of nickel silicide or cobalt silicide from the substrate. |
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