VERFAHREN ZUR AUFDECKUNG AUFTRETENDER KRISTALLVERSETZUNGEN IN EINEM KRISTALLINEN ELEMENT AUF GERMANIUMBASIS

VERFAHREN ZUR AUFDECKUNG AUFTRETENDER KRISTALLVERSETZUNGEN IN EINEM KRISTALLINEN ELEMENT AUF GERMANIUMBASIS

The method involves annealing an element i.e. silicon substrate, under an atmosphere formed of a mixture of oxidizing gas and inert gas at annealing temperature comprised between 530-570 degree Celsius, where the oxidizing gas is selected from nitrous oxide or water vapor, and the inert gas is selec...

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Hauptverfasser: SANCHEZ, LOIC, DEGUET, CHRYSTEL
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DEGUET, CHRYSTEL
description The method involves annealing an element i.e. silicon substrate, under an atmosphere formed of a mixture of oxidizing gas and inert gas at annealing temperature comprised between 530-570 degree Celsius, where the oxidizing gas is selected from nitrous oxide or water vapor, and the inert gas is selected from nitrogen or argon. The element is constituted of a crystalline germanium superficial layer formed on a germanium-on-insulator type substrate that is coated with an oxide film and made of silicon.
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title VERFAHREN ZUR AUFDECKUNG AUFTRETENDER KRISTALLVERSETZUNGEN IN EINEM KRISTALLINEN ELEMENT AUF GERMANIUMBASIS
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