VERFAHREN ZUR AUFDECKUNG AUFTRETENDER KRISTALLVERSETZUNGEN IN EINEM KRISTALLINEN ELEMENT AUF GERMANIUMBASIS
The method involves annealing an element i.e. silicon substrate, under an atmosphere formed of a mixture of oxidizing gas and inert gas at annealing temperature comprised between 530-570 degree Celsius, where the oxidizing gas is selected from nitrous oxide or water vapor, and the inert gas is selec...
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| Zusammenfassung: | The method involves annealing an element i.e. silicon substrate, under an atmosphere formed of a mixture of oxidizing gas and inert gas at annealing temperature comprised between 530-570 degree Celsius, where the oxidizing gas is selected from nitrous oxide or water vapor, and the inert gas is selected from nitrogen or argon. The element is constituted of a crystalline germanium superficial layer formed on a germanium-on-insulator type substrate that is coated with an oxide film and made of silicon. |
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