VERFAHREN ZUR VERGRÖSSERUNG DES GÜTEFAKTORS EINER INDUKTIVITÄT IN EINER HALBLEITERANORDNUNG

A method of fabricating an inductor (70) in a silicon substrate (10), wherein an Argon implantation step (84) is performed after the resist layer (82) has been deposited and the polysilicon layer (30) has been etched, but before the resist layer (82) is stripped and the polysilicon annealed. Thus, an amorphous layer (86) is created on the substrate (10) so as to improve the Q factor of the inductor (70), without the need for an additional masking step or adverse impact on the polysilicon layer (30).