DÜNNSCHICHTTRANSISTOR MIT TITANOXIDEN ALS AKTIVER SCHICHT UND DESSEN HERSTELLUNGSVERFAHREN

A manufacturing method and a structure of a thin film transistor are provided to prevent harmful environment by forming a titanium oxide as an active layer of the thin film transistor. An active layer(140) is formed on a substrate(110) by using a polycrystalline or amorphous titanium oxide layer. An insulating layer(150) is formed on the active layer. A gate electrode(160) is formed on the insulating layer. A source electrode(120) and a drain electrode(130) are formed on the substrate. The source electrode and the drain electrode are covered with an active layer. The source electrode and the drain electrode are covered with an insulating layer. The active layer is formed by using Ti-doped TiOx. The Ti-doped TiOx is formed by diffusing Ti atoms to the polycrystalline or amorphous titanium oxide layer.