VERFAHREN ZUR HERSTELLUNG VON CAF2- LINSENROHLINGEN, INSBESODERE FÜR DIE 193-NM- UND 157-NM-LITHOGRAPHIE MIT MINIMIERTEN DEFEKTEN

VERFAHREN ZUR HERSTELLUNG VON CAF2- LINSENROHLINGEN, INSBESODERE FÜR DIE 193-NM- UND 157-NM-LITHOGRAPHIE MIT MINIMIERTEN DEFEKTEN

Homogeneity residuals of the refractive index have a strong influence on the performance of lithography tools for both 193 and 157 nm application wavelengths. By systematic investigations of various defects in the real structure of CaF2 crystals, the origin of homogeneity residuals can be shown. Bas...

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Bibliographische Detailangaben
Hauptverfasser: SELLE, MICHAEL, PARTHIER, LUTZ, FOERSTER, ERIK
Format: Patent
Sprache:ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
METALLURGY
PHYSICS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TESTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:Homogeneity residuals of the refractive index have a strong influence on the performance of lithography tools for both 193 and 157 nm application wavelengths. By systematic investigations of various defects in the real structure of CaF2 crystals, the origin of homogeneity residuals can be shown. Based on a quantitative analysis we define limiting values for the individual defects which can be either tolerated or controlled by optimized process steps, e.g. annealing. These correlations were carried out for all three relevant main crystal lattice orientations of CaF2 blanks. In conclusion we achieved a strong improvement of the critical parameters of both refractive index homogeneity and striae for large size lens blanks up to 270 mm diameter.