HALBLEITERLEISTUNGSMODUL, MIT FLEXIBLEM SCHALTUNGSTRÄGERRAHMEN

A semiconductor power module (10) includes a semiconductor chip (16) thermally interfaced to a ceramic substrate (20) and a leadframe defined by a flexible circuit (28) disposed intermediate the chip (16) and the ceramic substrate (20). The flexible circuit (28) includes a conductor layer (28a) that is selectively encased in an insulated jacket (28a, 28b) to ensure adequate electrical insulation between the conductor layer (28a) and adjacent conductive surfaces. Preferably, the module (10) is constructed for double side cooling by sandwiching the chip (16) between a pair of ceramic substrates (20, 24) and providing intermediate flexible circuit leadframes (28, 30) on both sides of the chip (16) for electrically accessing the chip terminals (32, 34, 35).