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The present invention relates to a method for the production of airgaps in a semiconductor device. The formation of airgaps is based on chemically and/or mechanically changing the properties of sidewalls of a hole in a first dielectric layer locally, such that the sidewalls of the hole in said first...

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Bibliographische Detailangaben
Hauptverfasser:	MAEX KAREN, BEYER GERALD, GUENEAU DE MUSSY, JEAN-PAUL, SUTCLIFFE VICTOR
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a method for the production of airgaps in a semiconductor device. The formation of airgaps is based on chemically and/or mechanically changing the properties of sidewalls of a hole in a first dielectric layer locally, such that the sidewalls of the hole in said first dielectric layer are converted and become etchable by a first etching substance.