VORRICHTUNG ZUM EPITAKTISCHEN WACHSTUM MITTELS CVD

A device for epitaxially growing objects by Chemical Vapour Deposition on substrates (13) comprises a casing (2) defining a room (5) for receiving a holder (11) carrying a plurality of substrates and adapted to be rotated about a substantially vertical axis as well as means for rotating said holder...

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Bibliographische Detailangaben
Hauptverfasser:	LIU, YUIJING, HALLIN, CHRISTER, ZHOU, GANG, LOEFGREN, PETER
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A device for epitaxially growing objects by Chemical Vapour Deposition on substrates (13) comprises a casing (2) defining a room (5) for receiving a holder (11) carrying a plurality of substrates and adapted to be rotated about a substantially vertical axis as well as means for rotating said holder during the growth. The device has also means (10) for feeding a gas mixture for the growth into said room through an inlet (9) being directed substantially along said vertical axis and means (15) for heating said gas mixture inside said room for decomposition thereof and depositing of articles so formed on the substrate for growing layers thereon in a substantially vertical direction for said growth. The room (5) is delimited by a susceptor having fixed walls (7, 8) of a substantial thickness. The heating means (15) is adapted to heat the susceptor walls for heating said gas mixture substantially through radiation from the hot susceptor walls.