AVALANCHE-STRAHLUNGSDETEKTOR

AVALANCHE-STRAHLUNGSDETEKTOR

The avalanche radiation detector has a readout contact (A) on the front surface (VS) surrounded by a central avalanche region (AB). The central avalanche region consists of an n-doped region (DN) surrounded by an annular p-doped control electrode (R). The control electrode sets the electrical field...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STRUEDER, LOTHAR, LUTZ, GERHARD, RICHTER, RAINER H
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The avalanche radiation detector has a readout contact (A) on the front surface (VS) surrounded by a central avalanche region (AB). The central avalanche region consists of an n-doped region (DN) surrounded by an annular p-doped control electrode (R). The control electrode sets the electrical field strength in the central avalanche region. It sits on a continuous p-doped layer (DP) with a further p-doped ring (R') underneath. There is a thick n-doped semiconductor substrate (HK) under the central avalanche region. Radiation (h.f) enters the rear side (RS) of the detector through a p-doped electrode (RK).