HOCH Q-FAKTOR INDUKTIVITÄT MIT IM SUBSTRAT VERGRABENEN FARADAY-SCHIRM UND DIELEKTRISCHER WANNE

HOCH Q-FAKTOR INDUKTIVITÄT MIT IM SUBSTRAT VERGRABENEN FARADAY-SCHIRM UND DIELEKTRISCHER WANNE

Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below...

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Bibliographische Detailangaben
Hauptverfasser: ROSNER, JOANNA, CARASSO, MELANIE, GROVES, ROBERT, LUND, JENNIFER, CORDES, STEVEN, ACOSTA, RAUL
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TRANSFORMERS
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Beschreibung
Zusammenfassung:Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air.