VORRICHTUNG ZUR ERKENNUNG VON ELEKTROMAGNETISCHER STRAHLUNG UNTER STROMBEGRENZUNG

The device has a matrix of photodiodes i.e. pixels, associated to common substrate, where interaction of the photodiodes with radiation generates electrical charges. Each photodiode (1) is biased by an injection transistor (2) e.g. MOSFET. One of terminals of the transistor is connected to an integration capacitor (3) that stores the charges from the photodiodes. The charges are converted into voltage. Each pixel of the matrix is associated to a current limiter (5) to limit current generated by each photodiode to reference current irrespective of a radiation flow received by considered pixel.