VERFAHREN ZUR TRENNUNG VON ZIRKONIUM UND HAFNIUM

VERFAHREN ZUR TRENNUNG VON ZIRKONIUM UND HAFNIUM

Separation of zirconium- and hafnium compound comprises subjecting a mixture containing a hafnium compound (I) and zirconium compound (II), which contains a carbon atom, to fractional crystallization. Separation of zirconium- and hafnium compound comprises subjecting a mixture containing a hafnium c...

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Bibliographische Detailangaben
Hauptverfasser: KIRCHMEYER, STEPHAN, PASSING, GERD, REUTER, KNUD
Format: Patent
Sprache:ger
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Zusammenfassung:Separation of zirconium- and hafnium compound comprises subjecting a mixture containing a hafnium compound (I) and zirconium compound (II), which contains a carbon atom, to fractional crystallization. Separation of zirconium- and hafnium compound comprises subjecting a mixture containing a hafnium compound (I) of formula (HfR 4) and zirconium compound (II) of formula (ZrR 4), which contains a carbon atom, to fractional crystallization. R : organic residue (optionally containing one or more heteroatoms). An independent claim is included for a hafnium compound obtained by the process.