VERFAHREN ZUR BEHANDLUNG EINES DIELEKTRIKUMS ZUR VERWENDUNG VON HALBLEITERVORRICHTUNGEN

VERFAHREN ZUR BEHANDLUNG EINES DIELEKTRIKUMS ZUR VERWENDUNG VON HALBLEITERVORRICHTUNGEN

In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a ca...

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Bibliographische Detailangaben
Hauptverfasser: TSU, ROBERT, IIJIMA, SHIMPEI, ISAMU, ASANO, TAMARU, TSUYOSHI, MASATO, KUNITOMO, WILLIAM R., MCKEE
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a capacitor 12 dielectric 24. In turn, the capacitor could be used in a DRAM memory device.