MESOPORÖSER KERAMISCHER FILM MIT GERINGEN DIELEKTRIZITÄTSKONSTANTEN

A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing t...

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Bibliographische Detailangaben
Hauptverfasser: HEIER, KEVIN R, WEIDMAN, TIMOTHY W, LU, YUNFENG, MACDOUGALL, JAMES EDWARD, WEIGEL, SCOTT JEFFREY, DEMOS, ALEXANDROS T, NAULT, MICHAEL P, BEKIARIS, NIKOLAOS, MANDAL, ROBERT PARKASH
Format: Patent
Sprache:ger
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Zusammenfassung:A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.