PIEZOELEKTRISCHES KRISTALLELEMENT UND VERFAHREN ZUR HERSTELLUNG DESSELBEN

To improve the matching of physical parameters to the particular field of application of the piezoelectric device in the case of piezoelectric crystal elements composed of a mixed crystal which belongs to the group of metal orthophosphates and orthoarsenates having the empirical formula ABO4, where...

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Bibliographische Detailangaben
Hauptverfasser:	POSCH UWE, ENGEL GUENTER. DR, KREMPL PETER W. DR
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To improve the matching of physical parameters to the particular field of application of the piezoelectric device in the case of piezoelectric crystal elements composed of a mixed crystal which belongs to the group of metal orthophosphates and orthoarsenates having the empirical formula ABO4, where the position A is at least partly occupied by the element Ga, it is proposed that Ga comprises at least 50% of the cations, and that at least one of the positions A or B is occupied by at least two chemical elements, A standing not only for Ga but for the trivalent elements Al, Fe and Mn, and B for the pentavalent elements P and As, with at least one atomic per cent being present of each of the elements additionally occupying the positions A or B.