Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Cu X Zn1-XO films with different x content have been prepared by pulse laser deposition technique at room temperatures (RT) and different annealing temperatures (373 and 473) K. The effect of x content of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology and electrical properties of CuXZn1-XO thin films have been studied. AFM measurements showed that the average grain size values for CuXZn1-xO thin films at RT and different annealing temperatures (373, 473) K decreases, while the average Roughness values increase with increasing x content. The D.C conductivity for all films increases as the x content increase and decreases with increasing the annealing temperatures. Hall measurements showed that there are two types of conductance (n- type and p-type charge carriers). Also the variation of drift velocity (vd), carrier life time (), and free mean path (l) with different x content and annealing temperatures were measured.