Fabrication of p-Si / ZnO Thin Films Solar Cell by CVD at Different Substrate Temperatures

Zinc Oxide is a prominent candidate to be used a window layer in Si based solar cell. In this study, fabricated solar cell parameters with different substrate temperatures (400,450,500 ˚C) of Si/ZnO have been prepared by chemical vapor deposition method to find out the higher conversion. Moreover, it is found that Isc, Voc and η are increased for the substrate temperature increase at 500˚C. The best efficiency value calculated was 9.47% at substrate temperature 500˚C. Experimentally the electrical properties measured also ρ, σ and Φb as Si substrate temperature increased until 500˚C, the electrical resistivity of Si/ZnO solar cell was (0.231 ohm.m) at 400 ˚C and it is increased as Si substrate temp. increase, which leads to the decrease of conductivity.